Densification and Grain Growth of Indium-Tin-Oxide and Indium Oxide Thin Films Fabricated by Dip Coating Process
نویسندگان
چکیده
منابع مشابه
Tin-doped indium oxide thin films deposited by sol–gel dip-coating technique
Indium tin oxide (ITO) thin films were prepared by the sol–gel dip-coating (SGDC) technique. The microstructure and electrical properties of ITO thin films crystallized using rapid thermal annealing (RTA) were compared with those of films prepared by classic thermal annealing (CTA). ITO thin films were successfully prepared by CTA at 500 jC for 30–60 min. At the same temperature of 500 jC and w...
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Structural, electrical and optical properties of indium tin oxide or ITO (In2O3:SnO2) thin films on different substrates are investigated. A 100-nm-thick pre-deposited zinc oxide (ZnO) buffer layer is utilized to simultaneously improve the electrical and optical properties of ITO films. High purity ZnO and ITO layers are deposited with a radio frequency sputtering in argon ambient with plasma p...
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The initial stage of indium tin oxide (ITO) thin film growth, deposited by reactive thermal evaporation (RTE), was investigated using atomic force microscopy (AFM) measurements. Five ITO thin films were deposited by RTE of an In:Sn alloy in the presence of added oxygen on heated oxide substrates (Ts=440 K), with film thickness as the deposition variable. Surface imaging as well as statistical a...
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inese Materials Res 16/j.pnsc.2013.08.00 : Department of Ma ity 2220 Campus SA Tel.: þ1 847 49 chang@northwester esponsibility of Chin Abstract A series of 60 nm thick indium oxide thin-films, all amorphous as determined by x-ray diffraction, were found to have physical and electrical properties that depended on the temperature of deposition. The carrier mobility and film conductivity decreased...
متن کاملFunctionalization of indium tin oxide.
The preparation and functionalization of ITO surfaces has been studied using primarily X-ray photoemission spectroscopy and infrared reflection-absorption spectroscopy (IRRAS) and the reagents n-hexylamine and n-octyltrimethoxysilane (OTMS). Particular attention has been paid to characterization of the surfaces both before and after functionalization. Surfaces cleaned by ultraviolet (UV)/ozone ...
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ژورنال
عنوان ژورنال: Transactions of the Materials Research Society of Japan
سال: 2009
ISSN: 1382-3469,2188-1650
DOI: 10.14723/tmrsj.34.253